28C256 DATASHEET PDF
28C datasheet, 28C pdf, 28C data sheet, datasheet, data sheet, pdf, Atmel, K 32K x 8 Paged CMOS E2PROM. 28C Microchip. K (32K x 8) CMOS Electrically Erasable PROM. PIN CONFIGURATION. Top View. A 1 A7. A A *NC. Vcc. WE. . A2. 5 WE. A dimensions section on page 14 of this data sheet. ORDERING INFORMATION. PLCC−32 . 28C− 28C− Units. Min. Max. Min. Max. tRC.
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Only bytes which are specified for writing will be written; unnecessary cycling of other bytes within the page does not occur.
28C256 – 28C256 256K 250ns Parallel EEPROM Technical Data
CE to Output Delay. An optional software data protection mechanism is available to guard against inad- vertent writes. Atmel’s 28C has additional features to ensure high quality and manufacturability. A page write operation is initiated in the same datashdet as a byte write; the first byte written can then be followed by 1 to 63 addi- tional bytes.
The address is latched on the falling edge of CE or WE, whichever occurs datasheey.
This is a stress rating only and functional operation of the device at these or any other conditions beyond 28c25 indi- cated in the operational sections of this specification is not implied. The entire device can be erased using a 6-byte software code. Once a byte write has been started it will automatically time itself to completion. The data is latched by the first rising edge of CE or WE. Each successive byte must be written within The outputs are put in the high impedance state when either CE or OE is high.
Once the datassheet cycle has been completed, true data is valid on all outputs, and the next write cycle may begin. Fast Write Cycle Times. Refer to AC Programming Waveforms. Search field Part name Part description.
Input Test Waveforms and Measurement Level. Automatic Page Write Operation. When the device is deselected, the CMOS standby current is less than Address to Output Delay. Fast Read Access Time – ns.
Its K of memory is organized as 32, words by 8 bits. When enabled, the software data protection SDPwill prevent inadvertent writes. After writing the 3-byte command sequence and after t. A software controlled data protection feature has been implemented on the AT28C PROM memory are available to the user for device.
All command se- quences must conform to the page write timing specifica- tions.
28C (ATMEL) – k 32k X 8 Paged Cmos E2prom | eet
Page Write Cycle Time: OE dtaasheet be delayed up to t. CE datasheet be delayed up to t. All bytes dur- ing a page write operation must reside on the same page as defined by the state of the A6 – A14 inputs. Manufac- tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to ns with power dissipation of just mW. The device also includes an extra bytes of E.
Hardware and Software Data Protection. Reading the toggle bit may begin at any time during the write cycle.
No data will be written to the device; however, for the duration of t. Stresses beyond those listed under “Absolute Maxi. It should be noted, that once protected the host may still perform a 2c8256 or page write to the AT28C PROM for device identification or tracking.
28C Datasheet pdf – K 32K x 8 Paged CMOS E2PROM – Atmel
The device utilizes internal error correction for extended endurance and improved data retention characteristics. After setting SDP, 2c8256 attempt to write to the device with- out the 3-byte command sequence will start the internal write timers. X can be V.
SDP is enabled by the host system issuing a series of three write commands; three specific bytes of data are written to three specific addresses refer to Software Data Protection Algorithm. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is 28d256 on the outputs.